The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance and large bipolar current-carrying capability. Many designers view IGBT as a device with MOS input characteristics and bipolar output characteristic that is a voltage-controlled bipolar device. To make use of the advantages of both Power MOSFET and BJT, the IGBT has been introduced. It’s a functional integration of Power MOSFET and BJT devices in monolithic form.
Toshiba GT40T301S IGBT Failures on PCBs
Gideon Analytical Laboratories received two Printed Circuit Boards (PCBs) with failed Insulated-gate bipolar transistors (IGBTs). The IGBTs …
April 3, 2017IXYS IXGH32N60B Passivation Defect on IGBT
Gideon Analytical Laboratories performed failure analysis on several IXYS IGBT IXGH32N60B transistors, encased in TO-247 packages. These …
October 31, 2003
