# IGBT Failure Analysis


The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance and large bipolar current-carrying capability. Many designers view IGBT as a device with MOS input characteristics and bipolar output characteristic that is a voltage-controlled bipolar device. To make use of the advantages of both Power MOSFET and BJT, the IGBT has been introduced. It’s a functional integration of Power MOSFET and BJT devices in monolithic form.


## Pages

- [Toshiba GT40T301S IGBT Failures on PCBs](https://gideonlabs.com/posts/toshiba-gt40t301s-igbt-failures-on-pcbs/index.md)
- [IXYS IXGH32N60B Passivation Defect on IGBT](https://gideonlabs.com/posts/passivation-defect-on-igbt/index.md)